Borocarbonitrides

The band gap of borocarbonitrides range from 1.0–3.9eV^[1][7] and is dependent on the content of the carbon and boron nitride domains as they have different electrical properties.^[1] Borocarbonitrides with a high carbon content have lower bandgaps^[2] whereas those with higher content of boron nitride domains have higher band gaps.^[1] Borocarbonitrides synthesized in gas or solid reactions also tend to have large bandgaps and are more insulating in character.^[1] The wide range of composition of boronitrides allows for the tuning of the bandgap, which when coupled with its high surface area and Stone–Wales defects may make boronitrides a promising material in electrical devices.^[2][8]

A high surface area carbon material such as activated charcoal, boric acid, and urea are mixed together and then heated at high temperatures to synthesize borocarbonitride.^[2] The composition of the resulting compounds may be changed by varying the concentration of the reagents as well as the temperature.^[1]

In chemical vapor deposition, boron, nitrogen, and carbon precursors react at high heat and are deposited onto a metal substrate.^[1] Varying the concentration of precursors and the selection of certain precursors will give different ratios of boron, nitrogen, and carbon in the resulting borocarbonitride compound.^[2]

Borocarbonitride can also be synthesized by random stacking of boronitride and graphene domains through covalent interactions^[2] or through liquid interactions.^[1] In the first method, graphene and boron nitride sheets are functionalized and then are reacted to form layers of borocarbonitride.^[2] In the second method, boron nitride and graphite powder are dissolved in isopropanol and dimethylformamide, respectively, and then sonicated.^[2] This is then exfoliated to isolate borocarbonitride layers.