Centre for Device Thermography and Reliability
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| Established | 2001 |
|---|---|
Academic affiliations | University of Bristol |
| Endowment | £2.6m[1](2012-13) |
| Director | Martin Kuball |
| Deputy Director | Michael Uren |
Academic staff | 18 |
Administrative staff | 3 |
| Location | , England 51°27′23″N 02°36′16″W / 51.45639°N 2.60444°W |
| Website | www |
The Centre for Device Thermography and Reliability is a research facility at the University of Bristol, a research university located in Bristol, United Kingdom.[2] Founded in 2001, by Professor Kuball the centre is engaged in thermal and reliability research of semiconductor devices, in particular for microwave and power electronic devices. It is housed in the H. H. Wills Physics Laboratory, a noted physics laboratory associated with the Physics department of the university.[3] The centre is noted for developing an integrated Raman-IR thermography technique to probe self-heating in silicon, GaAs and other devices. This enables unique thermal analysis of semiconductor devices on a detailed level not possible before.[4] These techniques are critical in understanding the reliability of Compound semiconductor devices applicable in power and microwave devices and in the long term as a viable replacement for Silicon devices as it approaches the end of scaling.[5]
The institute gets funding from various government and private sector sources, such as European Space Agency and Engineering and Physical Sciences Research Council.[6]
