Guohan Hu
From Wikipedia, the free encyclopedia
Guohan Hu | |
|---|---|
| Education | Ph.D. from Cornell University |
| Occupation | Electrical engineering |
| Known for | Researching magnetoresistive RAM |
| Awards | IEEE Fellow |
Guohan Hu is an electrical engineer specializing in magnetic storage and spintronics, and especially in the use of spin-transfer torque in magnetoresistive RAM, a type of non-volatile random-access memory.[1] She works for IBM Research at the Thomas J. Watson Research Center as a distinguished research staff member and manager of the MRAM Materials and Devices group.[2]
Hu has a Ph.D. from Cornell University, completed in 2002.[2] She was elected as an IEEE Fellow in 2022, "for contributions to Spin-Transfer-Torque MRAM materials and devices".[3] She was named a Fellow of the American Physical Society in 2023, "for pioneering advancements in the development of materials and devices for spin-transfer torque magnetic random access memory, resulting in breakthroughs that have significantly enhanced the performance, scalability, and reliability of next-generation non-volatile memory technologies".[4]
