Indium arsenide antimonide phosphide
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Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material.
InAsSbP has been used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes and lasers,[1] photodetectors[2] and thermophotovoltaic cells.[3]
InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials.[4]
