Indium gallium aluminium nitride
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Indium gallium aluminium nitride (InGaAlN, AlInGaN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth methods such as metalorganic chemical vapour deposition (MOCVD).[1][2] This material is used for specialist opto-electronics applications, including laser diodes and LEDs with wavelengths from the UV to green regions of the optical spectrum.[1]
