Kenji Watanabe (scientist)
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August 8, 1962
James C. McGroddy Prize for New Materials (2023)
Asahi Prize (2024)
Kenji Watanabe | |
|---|---|
| Born | 渡邊賢司 August 8, 1962 |
| Alma mater | Shizuoka University Hokkaido University |
| Known for | High-purity hexagonal boron nitride (h-BN) |
| Awards | Clarivate Citation Laureates (2022) James C. McGroddy Prize for New Materials (2023) Asahi Prize (2024) |
| Scientific career | |
| Fields | Materials science |
| Institutions | National Institute for Materials Science |
Kenji Watanabe (渡邊賢司, Watanabe Kenji; born August 8, 1962) is a Japanese material scientist. He is a Specially Appointed Researcher at the National Institute for Materials Science (NIMS).[1]
Watanabe was born in Fujiyoshida, Yamanashi Prefecture.[2] He graduated from the Faculty of Science at Shizuoka University in 1985.[3][4] After received a Doctor of Science degree from the Graduate School of Science, Hokkaido University in 1990,[5][3][4] he joined Oki Electric Industry Co., Ltd.[3][4]
NIMS
Since 1994, Watanabe has been affiliated with the former National Institute for Research in Inorganic Materials (NIRIM), which is now part of the National Institute for Materials Science (NIMS).[3][4]
He served as a Principal Researcher in the Electronic Ceramics Group, Electronic and Electrical Functional Materials Field, Functional Materials Research Center at NIMS. In 2023, he became a Specially Appointed Researcher at the Electronic and Photonic Functional Materials Research Center of NIMS and also a Visiting Researcher in the Semiconductor Defect Control Group, Optical Materials Field, within the same center.[6]
His specialty is semiconductor physics and engineering,[3] and he has been collaborating with Takashi Taniguchi on the development of high-purity hexagonal boron nitride (h-BN) technology.[7]
