Oana Jurchescu

Physicist From Wikipedia, the free encyclopedia

Oana Jurchescu is a Romanian physicist who is the Baker Family Physics Professor at Wake Forest University. Her research considers charge transport in organic and organic/inorganic hybrid semiconductors. In 2022, she was awarded a National Science Foundation Special Creativity Award for her work translating organic electronic materials into real-world devices.

Early life and education

Jurchescu was an undergraduate student at the West University of Timișoara in Romania.[1] She moved to the University of Groningen in the Netherlands for her doctoral research, where she studied organic semiconductors for optoelectronic devices. She was a postdoctoral researcher at the National Institute of Standards and Technology.[1]

Research and career

In 2009, Jurchescu joined the Department of Physics at Wake Forest University. Her work considers novel functional materials and their application in electronic devices. She has particularly explored organic and hybrid organic-inorganic semiconductors and how they can realize large-area, flexible electronic devices.[2][3]

Jurchescu worked with physicians to realize organic field-effect transistor- based radiation detectors for patients undergoing cancer treatment. These devices, based on 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES ADT), acted as in vivo dosimeters to monitor radiation levels on a patient's skin in real time.[4] As well as pursuing high charge carrier mobilities, Jurchescu is interested in the degradation pathways that can impede the performance and lifetime of organic electronic devices.[5][6]

Jurcheschu was named Baker Family Professor of Physics in 2021.[7] In 2022, she was awarded an NSF Special Creativity Award to develop OSCAR, Organic Semiconductors by Computation on the Accelerated Refinement.[8][9] OSCAR look to develop novel functional molecular materials to accelerate commercialization.[10]

Awards and honors

Selected publications

  • Jurchescu, Oana D.; Baas, Jacob; Palstra, Thomas T. M. (2004-04-19). "Effect of impurities on the mobility of single crystal pentacene". Applied Physics Letters. 84 (16): 3061–3063. arXiv:cond-mat/0404130. Bibcode:2004ApPhL..84.3061J. doi:10.1063/1.1704874. ISSN 0003-6951. S2CID 118849296.
  • D J Gundlach; J E Royer; S K Park; et al. (17 February 2008). "Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits". Nature Materials. 7 (3): 216–221. doi:10.1038/NMAT2122. ISSN 1476-1122. PMID 18278050. Wikidata Q47910287.
  • Emily G Bittle; James I Basham; Thomas N Jackson; Oana D Jurchescu; David J Gundlach (10 March 2016). "Mobility overestimation due to gated contacts in organic field-effect transistors". Nature Communications. 7: 10908. Bibcode:2016NatCo...710908B. doi:10.1038/NCOMMS10908. ISSN 2041-1723. PMC 4792947. PMID 26961271. Wikidata Q36690168.{{cite journal}}: CS1 maint: article number as page number (link)
  • Oana D Jurchescu; Auke Meetsma; Thomas T M Palstra (15 March 2006). "Low-temperature structure of rubrene single crystals grown by vapor transport". Acta Crystallographica Section B: Structural Science. 62 (Pt 2): 330–334. doi:10.1107/S0108768106003053. ISSN 0108-7681. PMID 16552167. Wikidata Q82904721.

References

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