Paul Richman
From Wikipedia, the free encyclopedia
Columbia University (M.S.)
IEEE Harold A. Wheeler Award (1998)
IEEE Third Millennium medal (2000)
Paul Richman | |
|---|---|
 | |
| Born | November 17, 1942 |
| Education | Massachusetts Institute of Technology (B.S.) Columbia University (M.S.) |
| Awards | Elected Fellow of the IEEE IEEE Harold A. Wheeler Award (1998) IEEE Third Millennium medal (2000) |
| Scientific career | |
| Fields | Semiconductor physics |
| Institutions | General Telephone and Electronics Standard Microsystems Corp |
Paul Richman (born November 17, 1942) is an American semiconductor physicist and author.[1][2]
In 1963, Richman studied at M.I.T. and graduated with a Bachelor of Science in electrical engineering. In 1964, he earned a Master of Science in electrical engineering from Columbia University.[3]
Career
In 1971, Richman co-founded Standard Microsystems Corp (SMSC) as a research and development firm.[4][5] Before co-founding SMSC, he worked as a semiconductor physicist at General Telephone and Electronics.[6] In 1987, he moved to Japan with his family and started a collaboration called Standard Microsystems Japan.[4] Between 1971 and 1999, he served as the chief executive officer, president and chairman of Standard Microsystems.[7][8] During his tenure, SMSC became the largest chip maker on Long Island, and Intel Corp acquired a stake in the company.[4][9] Newsday has called him a pioneer in the computer chip industry.[4] He introduced a method for decreasing the size of chips by moving transistors closer together while increasing operating speeds and as a result devices operate quickly and efficiently.[4]
As an academic, Richman served as a visiting professor of electrical engineering at the City University of New York between 1974 and 1975 and at the State University of New York at Stony Brook between 1975 and 1987.[10]
From 1998 to 2002, he served on the Massachusetts Institute of Technology's Visiting Committee for Electrical Engineering and Computer Science.
Richman developed and held the basic patent for COPLAMOS technology, which pioneered the use of field-doped, locally-oxidized structures in metal–oxide–semiconductor (M.O.S.) integrated circuits.[2][11]