Trimethylbismuth
Chemical compound
From Wikipedia, the free encyclopedia
Trimethylbismuth is an organobismuth compound with the chemical formula Bi(CH3)3. It is a colorless flammable dielectric organometallic liquid.[1][3]
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| Names | |
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| IUPAC name
Trimethylbismuthane | |
Other names
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| Identifiers | |
3D model (JSmol) |
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| ChemSpider | |
| ECHA InfoCard | 100.008.927 |
| EC Number |
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PubChem CID |
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| UNII | |
CompTox Dashboard (EPA) |
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| Properties | |
| Bi(CH3)3 | |
| Molar mass | 254.085 g·mol−1 |
| Appearance | Colorless liquid[1] |
| Melting point | −85.9 °C (−122.6 °F; 187.2 K)[1] |
| Boiling point | 110 °C (230 °F; 383 K)[1] |
| Structure | |
| Trigonal pyramidal at Bi | |
| Hazards | |
| Occupational safety and health (OHS/OSH): | |
Main hazards |
Flammable, toxic, serious eye damage |
| GHS labelling:[2] | |
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| Danger | |
| H225, H250, H302, H311, H314 | |
| P210, P222, P231, P233, P240, P241, P242, P243, P260, P262, P264, P270, P280, P301+P317, P301+P330+P331, P302+P335+P334, P302+P352, P302+P361+P354, P303+P361+P353, P304+P340, P305+P354+P338, P316, P321, P330, P361+P364, P363, P370+P378, P403+P235, P405, P501 | |
| Lethal dose or concentration (LD, LC): | |
LD50 (median dose) |
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| Related compounds | |
Related compounds |
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Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa).
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Synthesis
Trimethylbismuth is produced by reaction of bismuth(III) chloride with methylmagnesium iodide in diethyl ether under atmosphere of nitrogen, hydrogen or carbon dioxide.[4]
- BiCl3 + 3 CH3MgI → Bi(CH3)3 + 3 MgClI
It can also be sinthesized by reaction between bismuth(III) bromide and methyllithium in tetrahydrofuran or diethyl ether under inert atmosphere.[4]
- BiBr3 + 3 CH3Li → Bi(CH3)3 + 3 LiBr
Reactions
Trimethylbismuth is reactive, especially in the presence of moisture, where it can hydrolyze to form bismuth(III) oxide and methanol.[5]
Uses
The optical properties of trimethylbismuth are relevant for particle detection.[3] Trimethylbismuth is commonly used in metalorganic chemical vapor deposition (MOCVD) processes, especially for creating thin bismuth-containing films. A mixture of trimethylbismuth and oxygen is used for growth of Bi2O3 rods on a silicon substrate without using any catalyst. Trimethylbismuth is used in material science, semiconductor technology, and chemical synthesis, where it enables the controlled addition of bismuth in various systems. Its properties make it important in producing high-performance materials for electronics and specialized chemical research.[6][7] Trimethylbismuth is used for the growth of GaAs1−yBiy semiconductor.[8]